E3200 GaN缺陷检测设备
适应晶圆尺寸Wafer Size
l Size: 4", 6", 8" compatible; 标配2 cassettes; other sizes upon requests
l Thickness: 350um~1500um（其它厚度需要测试）
缺陷类别及检测能力Defect Inspection Capability
Surface Defects | Materials | Sensitivity |
颗粒particle | Si | 81nm |
GaN on Si, Sapphire, PSS or SiC | 0.2um | |
凹坑 micropit | Epi pits GaN on Si, Sapphire or SiC | 0.2~0.3um |
Epi pits GaN on PSS | 0.5um | |
凸起bump | Epi bump GaN on Si or SiC | ≥1um bump; depth>5nm |
Epi bump GaN on Sapphire or PSS | ≥1um bump; depth>20nm | |
划伤scratch | GaN substrate | depth: 10nm；width: 0.4um；length: 10um |
GaN Epi | depth: 30nm；width: 0.5um；length: 10um | |
crescent | GaN on Si | 81nm |
Hex/Hex pit etc | GaN on Si, SIC，and PSS | Classified by deep learning algorithms |
污点stain | GaN substrate and GaN Epi | Diameter≥20um；height>1nm |
裂纹 crack | GaN on Si | 距表面15um内 |
PL缺陷检测：GaN crystal void; Hexagon; dark line, dark spot, fog, GaN crystal defect, PL scratch etc.
